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| FDG8842CZ Complementary PowerTrench(R) MOSFET April 2007 FDG8842CZ Complementary PowerTrench(R) MOSFET Q1:30V,0.75A,0.4; Q2:-25V,-0.41A,1.1 Features Q1: N-Channel Max rDS(on) = 0.4 at VGS = 4.5V, ID = 0.75A Max rDS(on) = 0.5 at VGS = 2.7V, ID = 0.67A Q2: P-Channel Max rDS(on) = 1.1 at VGS = -4.5V, ID = -0.41A Max rDS(on) = 1.5 at VGS = -2.7V, ID = -0.25A Very low level gate drive requirements operation in 3V circuits(VGS(th) <1.5V) Very small package outline SC70-6 RoHS Compliant allowing direct tm General Description These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. S2 G2 D1 D2 G1 S1 SC70-6 Pin 1 S1 G1 D2 Q2 S2 Q1 D1 G2 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) Q1 30 12 0.75 2.2 0.36 0.30 -55 to +150 Q2 -25 -8 -0.41 -1.2 Units V V A W C Thermal Characteristics RJA RJA Thermal Resistance, Junction to Ambient Single operation Thermal Resistance, Junction to Ambient Single operation (Note 1a) (Note 1b) 350 415 C/W Package Marking and Ordering Information Device Marking .42 Device FDG8842CZ Reel Size 7" Tape Width 8mm Quantity 3000 units (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 1 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = -250A, VGS = 0V ID = 250A, referenced to 25C ID = -250A, referenced to 25C VDS = 24V, VGS = 0V VDS = -20V, VGS = 0V VGS = 12V, VDS= 0V VGS = -8V, VDS= 0V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 -25 25 -21 1 -1 10 -100 V mV/C A A nA On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A VGS = VDS, ID = -250A ID = 250A, referenced to 25C ID = -250A, referenced to 25C VGS = 4.5V, ID = 0.75A VGS = 2.7V, ID = 0.67A VGS = 4.5V, ID = 0.75A ,TJ = 125C VGS = -4.5V, ID = -0.41A VGS = -2.7V, ID = -0.25A VGS = -4.5V, ID = -0.41A ,TJ = 125C VDS = 5V, ID = 0.75A VDS = -5V, ID = -0.41A Q1 Q2 Q1 Q2 Q1 0.65 -0.65 1.0 -0.8 -3.0 1.8 0.25 0.29 0.36 0.87 1.20 1.22 3 8 0.4 0.5 0.6 1.1 1.5 1.9 1.5 -1.5 V mV/C rDS(on) Static Drain to Source On Resistance Q2 Q1 Q2 gFS Forward Transconductance S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Q1 VDS = 10V, VGS = 0V, f= 1MHZ Q2 VDS = -10V, VGS = 0V, f= 1MHZ Q1 Q2 Q1 Q2 Q1 Q2 90 70 20 30 15 15 120 100 30 40 25 25 pF pF pF Switching Characteristics (note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge Q1 VDD = 5V, ID = 0.5A, VGS = 4.5V,RGEN = 6 Q2 VDD = -5V, ID = -0.5A, VGS = -4.5V,RGEN = 6 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 4 6 1 16 9 35 1 40 1.03 1.20 0.29 0.31 0.17 0.22 10 12 10 29 18 56 10 64 1.44 1.68 ns ns ns ns nC nC nC Q1 VGS =4.5V, VDD = 5V, ID = 0.75A Q2 VGS = -4.5V, VDD = -5V, ID = -0.41A (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 2 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage VGS = 0V, IS = 0.3A VGS = 0V, IS = -0.3A (Note 2) (Note 2) Q1 Q2 Q1 Q2 0.76 -0.84 0.3 -0.3 1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a. 350C/W when mounted on a 1 in2 pad of 2 oz copper . b. 415C/W when mounted on a minimum pad of 2 oz copper. Scale 1:1 on letter size paper. 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 3 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25C unless otherwise noted 2.20 VGS = 2.7V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 4.5V 2.6 VGS = 2.0V VGS = 1.8V 1.76 ID, DRAIN CURRENT (A) 2.2 1.8 1.4 1.0 0.6 0.00 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 2.0V 1.32 0.88 0.44 0.00 0.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS =1.8V VGS = 3.5V VGS = 2.7V VGS = 1.5V VGS = 4.5V 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 0.44 0.88 1.32 1.76 2.20 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.8 SOURCE ON-RESISTANCE () 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -50 ID = 0.75A VGS = 4.5V ID =0.38A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX rDS(on), DRAIN TO 0.6 TJ = 125oC 0.4 TJ = 25oC 0.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On - Resistance vs Junction Temperature 2.20 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 2 ID, DRAIN CURRENT (A) 1.76 1.32 0.88 0.44 0.00 0.0 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VDD = 5V 1 VGS = 0V 0.1 TJ = 150oC TJ = 25oC TJ = 150oC TJ = 25oC TJ = -55oC 0.01 TJ = -55oC 0.5 1.0 1.5 2.0 VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.001 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 4 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = 0.22A 200 100 CAPACITANCE (pF) Ciss Coss 4 3 2 1 0 0.0 VDD = 10V VDD = 15V VDD = 5V 10 Crss f = 1MHz VGS = 0V 0.2 0.4 0.6 0.8 1.0 Qg, GATE CHARGE(nC) 1.2 1.4 1 0.1 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 50 4 ID, DRAIN CURRENT (A) 1 r DS n) (o T MI LI 100s 1ms P(PK), PEAK TRANSIENT POWER (W) ED 10 SINGLE PULSE RJA = 415OC/W TA = 25OC 0.1 SINGLE PULSE TJ = MAX RATED RJA = 415OC/W TA = 25OC 10ms 1 100ms 1s DC 0.01 0.005 0.1 1 10 100 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 9. Forward Bias Safe Operating Area 1 DUTY CYCLE-DESCENDING ORDER VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 10. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZJA 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA o 0.01 SINGLE PULSE RJA = 415 C/W 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 5 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25C unless otherwise noted 1.2 -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -4.5V VGS = -3.5V VGS = -2.7V 5 VGS = -1.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 0.9 4 VGS = -2.0V VGS = -2.5V VGS = -2.7V VGS = -2.5V 3 2 VGS = -3.5V 0.6 VGS = -2.0V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -1.5V 0.3 1 0 0.0 VGS = -4.5V 0.0 0 1 2 3 4 0.3 0.6 -ID, DRAIN CURRENT(A) 0.9 1.2 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. On Region Characteristics Figure 14. Normalized on-Resistance vs Drain Current and Gate Voltage 4 SOURCE ON-RESISTANCE () 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.4 1.2 1.0 0.8 0.6 -50 ID = -0.41A VGS = -4.5V rDS(on), DRAIN TO ID =-0.22A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 3 2 TJ = 125oC 1 TJ = 25oC -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Normalized On Resistance vs Junction Temperature Figure 16. On-Resistance vs Gate to Source Voltage 0.6 -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 3 1 VGS = 0V -ID, DRAIN CURRENT (A) VDS = -5V TJ = -55oC TJ = 150oC TJ = 25oC 0.4 0.1 TJ = 150oC TJ = 25oC 0.2 0.01 TJ = -55oC 0.0 0.5 1.0 1.5 2.0 2.5 0.001 0.2 0.4 0.6 0.8 1.0 1.2 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Transfer Characteristics Figure 18. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 6 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET Typical Characteristics(Q2 P-Channel) TJ = 25C unless otherwise noted 5 -VGS, GATE TO SOURCE VOLTAGE(V) 200 ID = -0.41A 100 CAPACITANCE (pF) Ciss 4 3 2 1 0 0.0 VDD = -5V VDD = -15V VDD = -10V Coss 10 Crss f = 1MHz VGS = 0V 0.4 0.8 Qg, GATE CHARGE(nC) 1.2 1.6 1 0.1 1 10 25 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 19. Gate Charge Characteristics Figure 20. Capacitance vs Drain to Source Voltage 20 P(PK), PEAK TRANSIENT POWER (W) 3 -ID, DRAIN CURRENT (A) 1 r DS( ) on IT LIM ED 1ms 10 SINGLE PULSE RJA = 415OC/W TA = 25OC 10ms 0.1 SINGLE PULSE TJ = MAX RATED RJA = 415oC/W TA = 25oC 1 100ms 1s DC 0.01 0.3 1 10 50 0.1 0.001 0.01 0.1 1 10 100 1000 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 21. Forward Bias Safe Operating Area 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 Figure 22. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZJA PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE RJA = 415 C/W o 0.01 -3 10 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 23. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 7 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the worldTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM Motion-SPMTM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM PDP-SPMTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I26 (c)2007 Fairchild Semiconductor Corporation www.fairchildsemi.com |
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